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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 1/9
MTN2N60I3
Description
BVDSS : 650V @Tj=150 RDS(ON) : 4.7 ID : 1.9A
The MTN2N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications
Features
* BVDSS=650V typically @ Tj=150 * Low On Resistance * Simple Drive Requirement * Low Gate Charge * Fast Switching Characteristic * RoHS compliant package
Applications
* Open Framed Power Supply * Adapter * STB
Symbol
MTN2N60I3
Outline
TO-251
GGate DDrain SSource
G B
DS C
MTN2N60I3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25C)
Parameter Symbol
Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 2/9
Limits
Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TA=25) Total Power Dissipation (TC=25) Linear Derating Factor Operating Junction and Storage Temperature
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=1.2A, VDD=50V, L=80mH, RG=25, starting TJ=+25. 3. ISD2A, dI/dt100A/s, VDDBVDSS, starting TJ=+25.
VDS VGS ID ID IDM EAS IAR EAR dv/dt TL PD Tj, Tstg
600 30 1.9 1.14 7.6 60 1.9 4.4 4.5 300 1.5 44 0.35 -55~+150
V V A A A mJ A mJ V/ns C W W W/C C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.87 83.3 Unit C/W C/W
MTN2N60I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (TC=25C, unless otherwise specified)
Symbol Static BVDSS BVDSS BVDSS/Tj BVDS VGS(th) *GFS IGSS IDSS 600 2.0 650 0.6 700 5 8.5 1.3 4.1 9 25 24 28 180 20 4.3 230 1 4.0 100 1 10 4.7 12 28 60 58 66 235 25 5.6 1.4 1.9 7.6 V V V/C V V S nA A A Min. Typ. Max. Unit Test Conditions
Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 3/9
*RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr -
VGS=0, ID=250A, Tj=25 VGS=0, ID=250A, Tj=150 Reference to 25C, ID=250A VGS=0, ID=1.2A VDS = VGS, ID=250A VDS =15V, ID=0.95A VGS=30 VDS =600V, VGS =0 VDS =480V, VGS =0, TC=125C VGS =10V, ID=0.95A
nC
ID=2A, VDD=480V, VGS=10V VDD=300V, ID=2A, VGS=10V, RG=25, RD=150
ns
pF
VGS=0V, VDS=25V, f=1MHz
V A ns C
IS=1.9A, VGS=0V
VGS=0, IF=2A, dI/dt=100A/s
*Pulse Test : Pulse Width 300s, Duty Cycle2%
Ordering Information
Device MTN2N60I3 Package TO-251 (RoHS compliant) Shipping 80 pcs / tube, 50 tubes / box Marking 2N60
MTN2N60I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 4/9
MTN2N60I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 5/9
MTN2N60I3
CYStek Product Specification
CYStech Electronics Corp.
Test Circuits and Waveforms
Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 6/9
MTN2N60I3
CYStek Product Specification
CYStech Electronics Corp.
Test Circuits and Waveforms(Cont.)
Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 7/9
MTN2N60I3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product Pb-free devices Peak Temperature 260 +0/-5 C
Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 8/9
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3C/second max. (Tsmax to Tp) Preheat 100C -Temperature Min(TS min) -Temperature Max(TS max) 150C -Time(ts min to ts max) 60-120 seconds Time maintained above: -Temperature (TL) 183C - Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 C Time within 5C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6C/second max. 6 minutes max. Time 25 C to peak temperature
MTN2N60I3
Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStek Product Specification
CYStech Electronics Corp.
TO-251 Dimension
Marking:
A B C D F 3 E K 2 1 J G
Product Name Date Code
Spec. No. : C435I3 Issued Date : 2009.01.20 Revised Date :2009.02.05 Page No. : 9/9
2N60

I H
Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-251 Plastic Package CYStek Package Code: I3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835
Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20
DIM G H I J K
Inches Min. Max. 0.2559 *0.1811 0.0449 0.0346 0.2047 0.2165
Millimeters Min. Max. 6.50 *4.60 1.14 0.88 5.20 5.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: KFC; pure tin plated * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2N60I3
CYStek Product Specification

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